? semiconductor components industries, llc, 2003 june, 2003 - rev. 0 1 publication order number: nzl5v6axv3t1/d nzl5v6axv3t1 series preferred devices zener voltage regulators sc - 89 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring esd protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features: ? sc-89 package allows either two separate unidirectional configurations or a single bidirectional configuration ? standard zener breakdown voltage ranges ? esd rating of class n (exceeding 16 kv) per the human body model and iec61000-4-2 ? low leakage < 5.0 a mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic epoxy meets ul94, vo lead finish: 100% matte sn (tin) mounting position: any qualified max reflow temperature: 260 c device meets msl 1 requirements use the device number to order the 7 inch/3,000 unit reel. preferred devices are recommended choices for future use and best overall value. sc-89 case 463c style 4 1 3 2 pin 1. cathode 2. cathode 3. anode device package shipping ordering information nzl5v6axv3t1 sc - 89 3000/tape & reel nzl6v8axv3t1 sc - 89 3000/tape & reel nzl7v5axv3t1 sc - 89 3000/tape & reel marking diagram xx = device code d = date code see specific marking information in the device marking column of the table on page 2 of this data sheet. device marking information http://onsemi.com xx d 1 3 2
uni - directional tvs i pp i f v i i r i t v rwm v c v br v f nzl5v6axv3t1 series http://onsemi.com 2 maximum ratings rating symbol value unit total power dissipation on fr - 5 board (note 1) @ t a = 25 c derate above 25 c p d 240 1.9 mw mw/ c thermal resistance junction to ambient r q ja 525 c/w junction and storage temperature range t j , t stg - 55 to +150 c lead solder temperature - maximum (10 second duration) t l 260 c 1. fr - 5 board with minimum recommended mounting pad. *other voltages may be available upon request electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max @ i f = 10 ma for all types) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) breakdown voltage zener impedance device v rwm i r @ v rwm v br (note 2) (v) @ iz t z zt @ i zt z zk @ i zk device device marking volts a min nom max ma ma nzl5v6axv3t1 l0 3.0 5.0 5.32 5.6 5.88 5.0 40 200 1.0 nzl6v8axv3t1 l2 4.5 1.0 6.46 6.8 7.14 5.0 15 100 1.0 nzl7v5axv3t1 l3 5.0 1.0 7.12 7.5 7.88 5.0 15 100 1.0 2. v br measured at pulse test current i t at an ambient temperature of 25 c. 3. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) , with the ac frequency = 1.0 khz.
nzl5v6axv3t1 series http://onsemi.com 3 typical characteristics -55 +45 8.0 figure 1. typical breakdown voltage versus temperature (upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) -5 temperature ( c) + 95 + 145 7.0 6.5 6.0 5.5 5.0 4.5 -55 -5 250 figure 2. typical leakage current versus temperature temperature ( c) +45 +95 200 150 100 50 0 breakdown voltage (volts) (v br @ i t ) i r (na) 7.5 nzl5v6axv3t1 nzl6v8axv3t1 + 145 nzl5v6axv3t1 nzl6v8axv3t1 figure 3. typical capacitance versus bias voltage 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 4. steady state power derating curve temperature ( c) fr - 5 board p d , power dissipation (mw) 0 5 10 15 20 25 30 35 40 45 50 0 0.4 0.8 1.2 1.6 2.0 5.6 v 6.8 v temperature ( c) capacitance (pf)
nzl5v6axv3t1 series http://onsemi.com 4 typical common anode applications a dual junction common anode design in an sc-89 package protects two separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. two simplified examples of tvs applications are illustrated below. keyboard terminal printer etc. functional decoder i/o a nzlxxxaxv3t1 gnd computer interface protection b c d microprocessor protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd nzlxxxaxv3t1 nzlxxxaxv3t1
nzl5v6axv3t1 series http://onsemi.com 5 information for using the sc - 89 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sc - 89 0.53 1.10 0.50 0.53 dimensions in millimeters sc - 89 power dissipation the power dissipation of the sc-89 is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sc-89 package, p d can be calculated as follows: p d = t j(max) - t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 240 milliwatts. p d = 150 c - 25 c = 240 milliwatts 525 c/w the 525 c/w for the sc-89 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of tbd milliwatts. there are other alternatives to achieving higher power dissipation from the sc-89 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
nzl5v6axv3t1 series http://onsemi.com 6 sc - 89, 3 - lead case 463c - 02 issue b style 4: pin 1. cathode 2. cathode 3. anode g m 0.08 (0.003) x d 3 pl j -x- -y- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c - 01 obsolete, new standard 463c - 02. a b y 12 3 n 2 pl k c -t- seating plane dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m --- --- 10 --- n --- --- 10 --- s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref --- 10 --- 10 0.063 0.067 min max m s on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. typicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 2 - 9 - 1 kamimeguro, meguro - ku, tokyo, japan 153 - 0051 phone : 81 - 3 - 5773- 3850 on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. nzl5v6axv3t1/d thermal clad is a registered trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 - 675- 2175 or 800 - 344- 3860 toll free usa/canada fax : 303 - 675- 2176 or 800 - 344- 3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800 - 282- 9855 toll free usa/canada
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